IRFP4, SiHFP4product information. Check all PDF documents. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced . International egg—a Rectifier. Repetitive Avalanche Rated D.
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Isolated Central Mounting Hole. Parameters and Characteristics. Electronic Component Catalog. Shop with confidence on eBay! Id=20A) ,alldatasheet, datasheet, Datasheet . Pulse test, t ≤ 3µs, duty cycle d ≤. Behuizing: TO2met geisoleerd bevestigings gat.
MOSFET and the drain source voltage is 500V.
Пороговое напряжение на затворе. Техническая документация. Дополнительная информация. Dit is TO247AC transistor.
MOS, Vishay, Feldeffect-transistor, drain, FET, mos-fet, gate, field-effect transistor, . Voltage beoordeeld: 500V. The 2watt figure is really optimistic. One will be my power supply for the control circuit (12V). Minimale afname van het product is 1. NOTE: When ordering, use the entire part. Высокие динамические характеристики.
Ohm, N-channel Power MOSFET. IRFP 4LC – power MOSFETs,. Package: TO-24 1-gate, 2-drain, – sourse. Tevens zijn wij gespecialiseerd in elektronica en audio . Popis, Tranzistor MFET-N,Uds=500V,Id=20A,P=280W,Ron=270mOhm.
NTE Data Sheet Data Sheet.
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Encontrá Irfp4- Mosfet en Mercado Libre Argentina. Descubrí la mejor forma de comprar online.