Irf9640

For technical questions, contact: . Check all PDF documents. V(BR)DSS Drain-to-Source Breakdown . NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape . Ohm, P-Channel Power MOSFETs.

Parameters and Characteristics. Electronic Component Catalog. Consultez le stock, les prix et les spécifications produits, et commandez en ligne. Disponibilité du produit: In stock.

View datasheets, stock and pricing, or find other MOSFETs. HEXFET power MOSFET, P-Channel type, 200V drain-source breakdown voltage, 0. R drain-source on-resistance, 11A drain current, 20V gate source voltage, . These are P-Channel enhancement mode silicon-gate power field-effect transistors.

Transistor Type: MOSFET. They are advanced power MOSFETs designe teste and guaranteed to . Thousands of discounted electronic components in stock. No lead time, ship out right away!

Be the first to review this item . Type, MOSFET (Type Search). Manufacturer, SAMSUNG SEMI. How to Build an P-Channel MOSFET Switch Circuit.

In this project, we will go over how to connect an P-Channel MOSFET to a . These are P- Channel enhancement mode silicon-gate power field-effect transistors. Minimum Order Quantity : Pcs. Price Without VAT: 1Kč. POWER MOSFET P-CH 200V-11A.

Uds: 2V, Idss: A, Pd: 1W, Rds: Ohm Unipolární tranzistor P-Kanál, Provedení: Vývodové, Idss = A, Vds = 2V, Pd = 1W, Rds = Ohm, . PMOS Tests: Test Number, MOSFET, Compeletion. Once you know, you Newegg! Get great deals on eBay !

Id=-11A) ,alldatasheet, datasheet, Datasheet . We will send payment cleared orders out of our facility .

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