For technical questions, contact: . Check all PDF documents. NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape . Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per .

Parameters and Characteristics. Electronic Component Catalog. TO-2contribute to its wide acceptance throughout the industry.

Third Generation HEXFETs from lntemational Rectifier provide the designer with the best combination of fast switching, ruggedized device design, . HEXFET power MOSFET, P-Channel type, 100V drain-source breakdown voltage, 0. R drain-source on-resistance, 12A drain current, 20V gate source voltage, . Artikelnummer leverancier. The good news is that at least four companies have .

Большой выбор MOSFET, полевых транзисторов. Приятные цены, скидки на импортные . These are P-Channel enhancement mode silicon gate power field effect . MOSFET and the drain source voltage is -100V. Ilość: Produkt wycofany z . Availability: 1In stock. Пороговое напряжение на затворе. Техническая документация.

Дополнительная информация. Таблицы взаимозаменяемости . Type of Transistor: MOSFET. Количество приборов: свободно.

Hope you can understand. They are advanced power MOSFETs . Power Mosfet TO-220AB, 100V, 12A . Reeds meer dan jaar uw elektronica- specialist.

Persoonlijke dienstverlening . Функциональное назначение: мощный. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified. Drain to Source Breakdown Voltage (Note 1).

Полевой УМЗЧ Эндре Пирета заметно прост, но также соответствует нормам высококачественного звуковоспроизведения.

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