Irf830

ABSOLUTE MAXIMUM RATINGS (TC = °C, unless otherwise noted). IRF8, SiHF8Datasheet. Check all PDF documents. This N-Channel enhancement mode silicon gate power field effect transistor is an.

IMPORTANT – READ BEFORE DOWNLOADING, COPYING, INSTALLING, OR USING. DO NOT DOWNLOA COPY, INSTALL, OR USE .

Parameters and Characteristics. Electronic Component Catalog. N−Channel Enhancement Mode. All registered trademarks and trade names are properties of . Repetitive Avalanche Rated. N–Channel Enhancement Mode.

Большой выбор MOSFET, полевых транзисторов. Приятные цены, скидки на импортные транзисторы.

Same day shipping while supplies last! View datasheets, check stock and pricing, and search for. Пороговое напряжение на затворе. Техническая документация. Дополнительная информация.

ATTENTION INTERNATIONAL BUYERSInternational Buyers – Please . Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified. Drain to Source Voltage (Note 1). Type, MOSFET (Type Search). Manufacturer, SAMSUNG SEMI.

Online Get Best Irf8. Find great deals on eBay for irf8and irf840. IRF 8A – power MOSFETs,.

Uds: 5V, Idss: A, Pd: W, Rds: Ohm Unipolární tranzistor N-Kanál, Provedení: Vývodové, Idss = A, Vds = 5V, Pd = W, Rds = Ohm, . Transistor MOSFET de potencia, canal N, VDS 5V, RDS 1. Footprint Package: TO-220AB. HEXFET N-Channel Power MOSFET.

Ohm, N-channel Power MOSFET. Encontrá Irf 8en Mercado Libre Argentina. Descubrí la mejor forma de comprar online.

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