This device is designed for use as general purpose amplifiers and switches requiring collector currents to 3mA. SMALL SIGNAL NPN TRANSISTORS s. SILICON EPITAXIAL PLANAR NPN. TO-PACKAGE SUITABLE FOR.
IMPORTANT – READ BEFORE DOWNLOADING, COPYING, INSTALLING, OR USING.
DO NOT DOWNLOA COPY, INSTALL, OR USE . Parameters and Characteristics. Electro Andijk – U bent bij ons aan het juiste adres voor uw witgoed en huishoudelijke apparatuur. Tevens zijn wij gespecialiseerd in elektronica en audio . Tested with pulses tp = 3µs, duty cycle ≤ – Gemessen mit Impulsen tp = 3µs, Schaltverhältnis ≤. Category: Discrete Devices.
DC Current Gain hFE Max.
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Collector– Emitter Voltage. View datasheets, stock and pricing, or find other GP BJT. Транзистор кремниевый высокочастотный маломощный усилительный структуры NPN эпитаксиальный. When looking at the flat side with the leads pointed downwar the three leads emerging from the . Al onze producten zijn nieuw en met garantie! Neem dan gerust contact met ons op!
RGB value is (188124). Cylindrical-coordinate . Artikelnummer leverancier. Base Emitter Saturation Voltage.
Download datasheet file: . Small − Signal Current Gain. Read our article on how we match our transistors and for further . Parts labeled as pulls or pulled have been previously installed and are made by the original manufacturer. Let us fix the problem for you.